Abstract
This paper presents a numerical simulation study for electrical characteristics of double-gate (DG) nano-MOSFET at equilibrium thin-body condition. The electrical characteristics which are studied include subband energy (including unprimed and primed subbands), 2D electron density at 77K and 300K ambient temperatures, transmission coefficient, average electron velocity and ballistic current. The ranges of silicon body thickness TSi are 1.0 nm, 1.5 nm and 2.0 nm. The electron transport models used in simulation tool covered quantum model and classical model. Simulation output data are also compared with theoretical discussion.
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