Abstract
Planar devices and FinFET devices exhibit significant differences in single-event upset (SEU) response and charge collection. However, the charge collection process during SEU in FinFET devices has not been thoroughly investigated. This article addresses this gap by establishing a FinFET SRAM simulation structure and employing simulation software to delve into the charge collection process of FinFET devices during single-event upset. The results reveal substantial differences in charge collection between NMOS and PMOS, and that direct incidence of PMOS leads to the phenomenon of multiple-node charge collection causing SRAM unit upset followed by recovery.
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