Abstract
In this paper, ATLAS 2D device simulator of SILVACO was used for device simulation of inverted- staggered thin film transistor using amorphous indium gallium zinc oxide as active layer (a-IGZO-TFT) with double active layers, based on the density of states (DOS) model of amorphous material. The change of device performance induced by the thickness variation of each active layer was studied, and the interface between double active layers was analyzed. The best performance was found when the interface was near the edge of the channel, by optimizing the thickness of each active layers, the high performance device of threshold voltage (Vth )= -0.89 V, sub-threshold swing (SS)= 0.27, on/off current ratio (ION/IOFF) = 6.98 � 10 14 was obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
