Abstract
In this paper, a novel field effect nanowire MOS transistor taking advantage of both dual-material gate and surrounding gate is proposed and performance characteristics are demonstrated numerically in detail. Surrounding-gate transistor is known to be used to enhance the electrostatic control of the channel, and dual-material-gate structure is extended from split-gate field effect transistor to obtain larger current and better short-channel performance. Three dimensional device simulations with Sentaurus Device are performed on this dual-material surrounding-gate transistor. Higher driving current, high ION/IOFF ratio and suppressed short-channel effects are obtained with this novel device structure.
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