Abstract
In this paper we present a study of a silicon-based Single-Photon Avalanche Diode (SPAD) in the near-infrared band with double buried layers and deep trench electrodes fabricated by the complimentary metal–oxide semiconductor (CMOS) technology. The deep trench electrodes aim to promote the movement of carriers in the device and reduce the transit time of the photo-generated carrier. The double buried layers are introduced to increase the electric field in the avalanche area and withstand a larger excess bias voltage as its larger depletion region. The semiconductor device simulation software TCAD is used to simulate the performance of this SPAD model, such as the I-V characteristic, the electric field and the Photon Detection Efficiency (PDE). Further optimization of the structure are studied with influence factors such as the doping concentration and depletion region thickness. Based on the results in this study, the designed a structure that can provide a high detecting efficiency in the near-infrared band.
Highlights
The Single-Photon Avalanche Diode (SPADs) has become one of the most crucial photodetectors due to its high sensitivity in light detecting [1,2]
Based on tre avalanche effect, even a weak optical signal can produce a large current in the SPAD due to its high gain, high signal-to-noise ratio, low dark count, high sensitivity and fast response
To increase the Photon Detection Efficiency (PDE) in the near-infrared band, many studies have been performed around the world, examining approaches such as introducing guard ring structures, tuning the multiplication region depth and so on [5,6,7]
Summary
The Single-Photon Avalanche Diode (SPADs) has become one of the most crucial photodetectors due to its high sensitivity in light detecting [1,2]. To increase the Photon Detection Efficiency (PDE) in the near-infrared band, many studies have been performed around the world, examining approaches such as introducing guard ring structures, tuning the multiplication region depth and so on [5,6,7]. We introduce a new structure with double buried layers and deep trench electrodes. The buried layers are used to adjust the distribution of the avalanche and depletion region, and realize the uniform distribution of the electric field [8,9,10]. The deep trench electrodes together with the P-buried layer can form a low resistance path for the carrier transmission between electrodes and improve the internal electric field of the device.
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