Abstract

The influence of different physical mechanisms on linearity using 2D device simulation is analyzed. RF linearity of SOI and DG-MOSFETs at 50 nm gate length is investigated. ISE TCAD is employed to simulate terminal characteristics of generic bulk, SOI and DG-MOSFET structures. Impact ionization of channel carriers and SHE (self-heating effects) are also accounted for in the thin-body devices. DC transfer characteristics (I/sub D/-V/sub G/ curves) are used to obtain transconductance g/sub m/ and AC simulation is employed to capture bias dependence of output conductance g/sub d/.

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