Simulation study of Fermi level depinning in metal-MoS2 contacts

Abstract

We used Density Functional Theory (DFT) to study the Fermi level pinning and Schottky barrier height in metal-MoS2 contacts. We showed that the Fermi level de-pinning could be attained by controlling the distance between the metal and MoS2. In particular, with proper buffer layers and the use of back-gated structures, the Schottky barrier height can be practically zeroed in some metal-MoS2 stacks, which is important to attain Ohmic contacts.