Simulation study of an enhancement-mode n-type InGaAs MOSFETs with a low zero bias off-current

Abstract

InGaAs channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with thin channels and wide-bandgap InP vertical field spacers in the S/D have been simulated and investigated. I-V characteristics and leakage current are carefully studied. Good performance can be achieved by controlling indium concentration of InGaAs channel, delta doping concentration and InP caplayer thickness. Simulation results show that an enhancement-mode n-type InGaAs MOSFETs with a low zero bias off-current La can be achieved. An InGaAs MOSFET with L g =450nm has been made and the measured data fit well with the simulated results.