Abstract
In this paper, a novel GaN-based field stop-insulated gate bipolar transistor (FS-IGBT) is designed, which combines GaN-based Fin-MOS with the conventional material FS-IGBT, and the static and dynamic electrical characteristics of the device are simulated by Silvaco. The results show that the structure has a high saturation current (I on,sat) density of 155 kA cm−2 at 10 V gate voltage (V ge), an on-state voltage (V on) of 3.5 V, a breakdown voltage (BV) of 1650 V, and a switching speed of nanoseconds. The characteristics of the device are analyzed and compared with Fin-MOS. The results demonstrate that the vertical GaN-based device can display both high current density and high BV due to the FS layer that adjusts the electric field distribution in the N-drift region. The paper also analyzes the selection of device parameters and feasibility of device manufacturing based on the existing material growth method and device manufacturing technology.
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