Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT With Embedded P-Type Schottky Barrier Diode

Abstract

In this article, a novel reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with embedded diode and p-type Schottky Barrier Diode (p-SBD) is proposed. The two diodes are connected in series through a floating electrode, which provides a current path for carriers in reverse-conducting mode. Compared with the Separated Shorted-Anode RCLIGBT (SSA-RC-LIGBT), the proposed structure not only eliminates the snapback voltage ( $\Delta {V}_{\text {SB}}$ ) but also avoids the waste of device area. Therefore, the superior reverse recovery characteristics and excellent tradeoff relationship between ON-state voltage ( ${V}_{ \mathrm{\scriptscriptstyle ON}}$ ) and turn-off loss ( ${E}_{ \mathrm{\scriptscriptstyle OFF}}$ ) are obtained. The reverse recovery charge of the proposed RC-LIGBT shows 43.9% and 63.2% reduction compared with those of the SSA-RC-LIGBT with ${L}_{\text {B}}$ (distance between the p+ collector and the shorted n+ collector) being 34 and $64~\mu \text{m}$ , respectively. The turn-off loss of the proposed RC-LIGBT at ${V}_{ \mathrm{\scriptscriptstyle ON}} = {2.6}$ V is reduced by 68.2% and 87.1% compared with those of the SSA-RC-LIGBT with $\sf \Delta {V}_{\text {SB}} = {0.48}$ V and $\sf \Delta {V}_{\text {SB}} = {0.17}$ V, respectively. Moreover, the proposed RC-LIGBT has a self-adjusted collector injection efficiency under different temperatures to dramatically improve the Short Circuit Safe Operation Area (SCSOA).