Simulation study of a novel AlGaN/GaN L‐FER with ultralow turn‐on voltage and low reverse leakage

Abstract

In this work, a novel AlGaN/GaN lateral field-effect rectifier (L-FER) with ultralow turn-on voltage (VT) and low reverse leakage current (IR) is proposed and verified by technology computer aided design (TCAD) Sentaurus. Through shortly contacting the short-channel metal–oxide–semiconductor (MOS) structure with an Ohmic-contact structure as the anode of the proposed L-FER, an ultralow VT can be realized. And by inserting a floating clamp (FC) electrode near the cathode-side MOS edge, the transverse channel potential at the MOS edge could be clamped to a small value. Thus, the high IR induced by the short-channel effect in the MOS structure could be suppressed. In contrast to the conventional short-channel L-FER, the proposed FC-L-FER exhibits about four orders of magnitude reduction in IR, without obvious degeneration in the forward current and VT. Moreover, the proposed FC-L-FER also delivers excellent reverse recovery characteristics.