Abstract
The substrate temperature optimization in a Hot Filament Chemical Vapor Deposition (HFCVD) plays an important role in the growth rate and quality of diamond thin films. In the present study, simulations are carried out using the finite volume method to optimize the substrate temperature on a Si wafer during the deposition process. Simulations are carried out on a novel spiral filament arrangement placed above Si wafer and the temperature distribution on the substrate is studied for three different spiral configurations of 3, 4, and 5 turns. Deposition parameters are optimized using this model as H (filament substrate proximity) = 7–8 mm, d (diameter of filament) = 1.3 mm and T (number of turns) = 4. It is observed that the gas density near the filament is improved by shifting the position of the gas inlet from the center of the chamber to the side opposite to the gas outlet. This study enables to optimize a uniform substrate temperature distribution for a novel spiral filament geometry that can produce a diamond coating of uniform thickness over a large area.
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