Abstract
C-Si based heterojunction solar cells with dopant-free electron and hole transport layers (ETL and HTL) have attracted the researcher’s attention due to their high efficiency and relatively less complicated fabrication process. A number of materials have been proposed for their applications, as ETL and HTL. We have chosen n-type MoS2 monolayer as ETLfor c-Si based heterojunction solar cells and optimized the layer parameters, doping and thickness to achieve the efficiency of 21.05% with a Voc of 641 mV and Jsc of 45.88 mA/cm2 when direct metallization of Ag is used at back contact using one sided short diode approximation. Further, withinsertion of MoO3 as HTL at the back before Ag electrode, the efficiency could be improved to 23.54%with proper tuning of work function of MoO3. The increase in efficiency is accompanied with a small increase in Voc (650 mV) and Jsc (46.5 mA/cm2). Our studies provide a pathway to fabricate dopant free c-Si based heterojunction solar cells with comparable efficiency as those for HIT solar cells.
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