Abstract
Liquid phase epitaxial growth of In1-xGaxAsyP1-y, a well known quaternary compound semiconductor, has been studied systematically. A numerical simulation technique has been employed to construct the concentration profiles of Ga, As, and P atoms in an In-rich melt at successive equally spaced layers in front of an InGaAsP crystal growing by LPE. The growth rate has been calculated using the concentration gradients established at the solid-liquid interface. The composition and the thickness of the grown InGaAsP solid layer have been studied as a function of growth parameters, such as cooling rate, system temperature, and growth time. It is observed that the thickness of the grown solid depends on the cooling rate, whereas the solid compositions do not show any dependence on the cooling rate. Our theoretical findings have been compared with experimentally reported values and the results are discussed in detail.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
