Simulation Studies of InGaN Based Light-Emitting Diodes to Reduce Electron Overflow Problem by Designing Electron Blocking Layer.

Abstract

InGaN/GaN-based Multi Quantum Well light-emitting diodes (MQW LEDs) with p-AlInGaN/AlGaN electron blocking layers are studied using the SimuLED simulation software for analysing the electron leakage problem. The simulation results specify the importance of p-AlInGaN/AlGaN electron blocking layers (EBL) to improve the optical and electrical performance of the LED device structure. The designed cascade AlInGaN layer in AlInGaN/AlGaN EBL was investigated by changing different Al and In concentrations and was analysed. It shows an increase in Internal Quantum Efficiency by insertion of Al(x)In(y)Ga(1-x-y)N-Al0.15Ga0.85N(X = 0.1, Y = 0.15) EBL instead of conventional AlGaN EBL. Structure shows an increasing carrier capture within active region with minimizing carrier leakage and a significant reduction in efficiency droop. The suppression in Efficiency droop phenomenon can be attributed to p-AlInGaN/AlGaN electron blocking layers which aiding a supportive barrier for electron overflow and thereby enhancing the electron blocking efficiency.