Simulation Research on Transient Junction Temperature Characteristics of High Power IGBT

Abstract

Because the characteristics of semiconductor materials are greatly affected by temperature, the working characteristics of semiconductor electronic devices also change greatly with the change of temperature. High-power power electronic devices will bear larger conduction current and blocking voltage when working, and the temperature rise and fluctuation range will be more significant when working. Especially in the special working mode of short-time rest pulse, the junction temperature inside the chip will rise sharply and fluctuate greatly. The commonly used method of detecting the bottom plate shell temperature by thermocouple and then calculating the steady-state junction temperature can no longer meet the demand. According to this situation, this paper first analyzes the principle of junction temperature fluctuation of high-power power electronic devices, and then establishes the equivalent heat transfer model from the device bottom plate to the internal chip by using the multi-node heat transfer network method. Finally, the transient change and fluctuation process of the chip junction temperature during short-time intermittent pulse operation are obtained through simulation analysis, and the accuracy of the model is also verified.