Abstract
In this paper, the effect of temperature rise of MOSFET on output performance of synchronous dc converter is studied. Firstly, the power loss calculation method and thermal resistance equivalent circuit of switching devices are analyzed, and mathematical modeling is carried out for the conduction mode and change rule of junction temperature, housing temperature and radiator temperature of switching devices, and the MOSFET temperature rise model is built in Matlab environment, and the temperature rise curves of different parts of MOSFET switching devices are obtained. By means of the model, the effect of temperature rise on the output and control signal of the synchronous DC converter is studied. The simulation results show that the effect of temperature rise on the switching device will increase the internal resistance of the switching device, decrease the gate opening voltage and reduce the output voltage. In the real circuit design, it is necessary to leave a margin for the above parameters to ensure an ideal output.
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