Abstract
A new structure of 4H–silicon carbide (SiC) merged PiN-Schottky (MPS) diodes with offset field-plate (FP) as edge termination is developed. To understand the influences of 4H–SiC MPS diodes with offset FP on the characteristics, simulations have been done by using ISE TCAD. Related factors of offset FP have been studied as well to optimise the reverse characteristics of 4H–SiC MPS diodes. The simulation results show that the device using offset FP can create a higher blocking voltage under reverse bias as compared with that using field guard rings. Besides, the offset FP does not cause any extra steps in the manufacture of MPS diodes.
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