Abstract
In order to meet the requirements of flexible HVDC transmission project and improve the current density of single IGBT chip, the design and optimization of 4500V edge termination structure were carried out. A VLD edge termination structure and a multi-step field plate plus field-limiting ring (MFPFLR) edge termination structure were designed by TCAD simulation software. The influence of Si/SiO2 interface charge on the edge termination structure was simulated and studied. And the breakdown voltage characteristic curve and potential distribution of the two edge termination structures were compared. Finally, the MFPFLR edge termination has better characteristics, and was verified on a 4500V IGBT chip. The test results show that the 4500V IGBT chip with two different edge termination structures meet the design expectation, and the key parameters of 4500V IGBT chip with MFPFLR edge termination structure were significantly optimized compared with VLD edge termination structure.
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