Simulation on total current density of CIGS solar cell with polysilicon contact window

Abstract

CIGS (Copper (Cu), Indium (In), Galium Ga), Diselenide (Se2)) solar cell is the developing technology because of its low cost production and reliability of CIGS semiconductor itself. In this paper the difference of total current density and the IV curve of the CIGS solar cell will be shown when polysilicon was used as a contact window to replace aluminum doped zinc oxide (ZnO;Al) and the thickness of molybdenum and CIGS varied. The thickness of CIGS is varied to get the best thickness in order to obtain a good total current density since polysilicon is not widely used as an electrode in solar cell. Current density of CIGS solar cell will be shown in the figures at the result section.