Simulation on continuous-wave silicon carbide Raman laser pumped by 1550 nm lasers

Abstract

We present a detailed simulation-based analysis of continuous-wave (CW) Raman laser in silicon carbide (SiC) waveguide based on SiC-on-insulator (SiCOI). Both Fabry–Perot (FP) cavity and ring-resonator configurations were designed for Raman lasing, which are pumped by 1550 lasers. According to the Raman coupled wave equation, for FP cavity Raman laser, the relations between laser output performances and key parameters such as output reflectivity, waveguide length, and pump power had been systematically analyzed. Similarly, the effects of ring length, coupling coefficient, and coupler position on the output performance were also investigated based on the ring resonator. The results demonstrate the significant potential of near-infrared Raman lasing from SiC. It provides theoretical guidance for the experimental design of the on-chip SiC Raman laser.