Simulation on Chemical Mechanical Polishing using Atomic Force Microscope

Abstract

A micro-contact model for chemical mechanical polishing (CMP) of Si wafer is presented. The model is developed on the basis of the Greenwood-Williamson micro contact mechanics. The atomic force microscope (AFM) is used as a polishing test apparatus to evaluate the removal rate by a single particle in CMP slurry. Using this model and AFM, the simulation on polishing of SiO2 is performed. The model is evaluated by comparing the simulated polishing rate and that experimentally determined by real CMP processes. The validity of the AFM wear test and the contact model proposed is discussed.