Abstract
Plasma doping (PD) is a potential shallow junction technology for advanced integrated circuits manufacturing. Accurate simulation on PD is thus needed. The simulation on PD induced B concentration profile in Si is presented in this paper. A computational efficiency Molecular Dynamics (MD) method is applied. The plasma potential, the deviation of ion energy, and the injection angle are considered. The effect of physical models, including different ion species, threshold energy of displacement, energy variation model, electronic stopping model, is investigated. It is demonstrated that the proper agreement between simulation results and experimental data can be achieved for PD.
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