Simulation of void growth and coalescence behavior with 3D crystal plasticity theory

Abstract

The influence of crystallographic orientation on the void growth and coalescence in FCC single crystal is numerically simulated with the three dimensional crystal plasticity finite element method, which is implemented with the rate dependent crystal plasticity theory as user material subroutine. A 3D unit cell including one sphere void or two sphere voids is employed with three-dimensional 12 slip systems. The computed results of four single crystals with different crystallographic orientations are compared. The results of the simulations have shown that the crystallographic orientation has significant influences on the growth behavior of void, which includes the growth direction and shape of voids. Crystallographic orientation also plays a role in void coalescence, and the width of inter-void ligament is dependent on the position of voids and crystallographic orientation. If the link line of the centers of voids is parallel to the maximal void growth direction, crystal tends to show coalescence effect more easily.