Abstract
The anomalous `uphill' diffusion behaviour of implanted silicon in GaAs reported by Chen et al (1990 Jap. J. Appl. Phys. 29 L1950) has been simulated. From their experiment, this `uphill' diffusion was found to be implantation-dosage dependent. Below the threshold dosage of , no `uphill' diffusion was observed. In this work, we suggest that this anomalous behaviour is due to the formation of vacancy clusters when the implantation dosage is high enough. Silicon atoms are assumed to migrate through the Ga vacancies, which are comparatively mobile. On the other hand, the immobile clusters agglomerate silicon atoms around the vacancy peak, resulting in the `uphill' diffusion behaviour. A dip in carrier concentration profile also occurs at high dose implantations. Unlike the amphoteric nature on increasing silicon doping, the occurrence of this dip is attributed to the effect of the trapping of silicon atoms in the clusters where the former are not electrically activated.
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