Abstract
A numerical model has been developed to calculate the electron tunneling current component from gate edges of metal-oxide-silicon capacitor/transistor structures, which had been neglected in previous studies. Tunneling probability from the gate edge is obtained by direct solution of the time-independent Schrödinger equation, using Schwarz–Christoffel transformation to map the nonplanar gate edge region to a rectangular domain, and solving the transformed Schrödinger equation by finite element methods.
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