Abstract
The time-dependent charging mechanism of an electrically insulating resist film on a Si substrate under electron-beam irradiation is proposed based on results obtained by a numerical simulation. The primary electron trajectory and the secondary electron cascade multiplication in the resist are calculated by Monte Carlo simulation, and spatial distributions of the electron deposition and the energy deposition in the resist are obtained. The potential distribution in and above the resist is obtained by solving the Poisson equation. The electron trajectory bending due to the electric field is calculated. The electron-beam-induced conduction is calculated based on the energy deposited. The potential distributions obtained in the resist show quite good agreement with the experimental results.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
