Abstract
AbstractStresses induced at the GaAs-Al2O3 interface by large ΔT excursions have been investigated by finite element simulation and have been correlated with experimental results. The effects of power and temperature cycling on crack propagation at the die attach are investigated. The FEA (finite element analysis) method is used to simulate the effect of die attach voids on the peak surface temperature and on the die stresses. These voids in the die attach are identified to be the major cause of die cracking. It was found that stresses developed on the die because of the environmental temperature changes and their dissipation as part of an effective thermal management is necessary to ensure reliable performance.
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