Abstract

Due to thermal mismatch, stresses develop in n-type diamond thin films when cooled down to room temperature from deposition temperature. In this investigation, thermal stresses in diamond films deposited on silicon substrate are calculated, the influence of temperature and film thickness on thermal stresses are also discussed. The results show that thermal stresses are sensitive to deposition parameters, the thermal stresses increase with the increase of deposition temperature, reach the maximum value of 0.724GPa at 1000k, and then begin to decrease. With the increase of diamond thickness and substrate thickness, the thermal stresses decrease and increase respectively.

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