Simulation of the potential distribution in an inhomogeneously doped workspace of a double-gate SOI CMOS nanotransistor

Abstract

One possible approach to the analytical solution of the 2D Poisson equation for potential in the workspace of a double-gate CMOS nanotransistor with a silicon-on-insulator structure with an inhomogeneously doped workspace as a Gaussian function is discussed. Based on the numerical solutions of the Poisson equation, the dependences of a number of major doping electrophysical characteristics, such as the potential distribution in the workspace, threshold voltage, and subthreshold current under different technological parameters on the dopant profile, are analyzed. For the selected topological standards, the optimization of the dopant profile parameters gives an additional opportunity to control the main characteristics, along with the thickness of the workspace and the thickness of the gated oxide of the front shutter, which is important in the analysis of the applicability of nanotransistor structures. The physical limitations to optimize the electrophysical characteristics, and in particular, the effective suppression of the short channel effects, are considered. The simulation results are in good accordance with the modeled data obtained using a commercially available for 2D simulation of the transistor structures ATLASTM software package.