Simulation of the electron dynamics in a magnetron sputtering device with equipotential and non-equipotential cathode

Abstract

The magnetron sputtering of cathode material is one of the ways of producing a thin film deposition on solid surfaces and maintaining the cathode system under a certain potential. Recently, some experimental study of a magnetron sputtering system with the segmented cathode at different electric potential on each segment has been conducted. It allows the system productivity regarding the rate of deposition to be over the volt-ampere current limitations imposed on each segment. The physical processes associated with generating and sustaining it in this system are complex and have not been explained so far from a theoretical point of view. In this work, we present a computational study of the electron dynamics in the simple particle approximation which is found in a two-segments magnetron discharge under the influence of both the magnetic field and the segment electric potentials of 750 V and 500 V. The fields are calculated by using comsol multiphysics ®. The particle dynamics is studied through numerical solution of the Newton-Lorentz equation. The simulations show that the Hall current symmetry is determined by the electrode segments geometry. The obtained results are checked through the simulations fulfilled to maintain the cathode system at the same potential.