Simulation of Ta 2O 5-gate ISFET temperature characteristics

Abstract

The simulated response of an ion-sensitive field-effect transistor (ISFET) with a tantalum pentoxide-gate (Ta 2O 5-gate) insulator is introduced in this paper. This simulation is based on the site-binding model and is designed for an ISFET working in a constant charge mode. Here, the temperature characteristics of Ta 2O 5-gate ISFET were theoretically studied. First, the Stern Electrical Double Layer Model was used to induce the p K a and p K b of Ta 2O 5 values. Secondly, the temperature coefficient was calculated to draw the related curve of the different temperature parameters using the p K a and p K b values and the ISFET behaviors. ISFETs were predicted under different temperatures.