Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT

Abstract

Simulations and measurements of submicron pseudomorphic high electron mobility transistors (HEMTs) are presented. For the simulations the generic device simulator MINIMOS-NT is used which is capable of dealing with complex device geometries as well as with several physical models represented by certain sets of partial differential equations. A description of the structure of the simulator is given, which shows the basic idea of splitting the device geometry into distinct regions. Within these "segments", arbitrary material properties and physical models, i.e., partial differential equations, can be defined independently. The segments are linked together by interface models which account for the interface conditions. The simulated characteristics of a HEMT with a gate length of 240 nm are compared with the measured data. Essential physical effects which determine the behavior of the device can be identified in the output and transfer characteristics.