Abstract
LaNiO3 (LNO) thin films are widely used as electrode materials. Yet, their properties greatly depend on such parameters as strain state and defect density. In this work, we present a detailed structural characterization of epitaxial LNO thin films grown on LaAlO3(001). A noticeable lack of contrast between La/Ni ions occurs in selected areas as seen by scanning transmission electron microscope, high-angle annular dark-field imaging (STEM-HAADF). By using atomistic modelization and image simulations, we show that this effect, rather than signaling cation interfusion or other spurious effects, results from different Ruddlesden-Popper faulted combinations with 1/2a⟨111⟩ relative displacement of defect free perovskite blocks, in the LaNiO3 perovskite
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