Abstract
As the gate length of MOSFETs keeps scaled down, source-to-drain (S/D) tunnelling current becomes significant. S/D tunnelling current is simulated in this work using WKB method, and is based on the quantum ballistic transport model. The dependence of the S/D tunnelling current on channel length and silicon film thickness is examined. It is shown that with channel length as small as 6nm, only extremely thin silicon film (thickness of 1nm) can deliver good device characteristics. Comparison to NEGF simulation confirms the validity of the proposed approach.
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