Abstract
Recent studies indicate as an important technological step the development of infrared HgCdTe-based focal plane arrays (FPAs) with sub-wavelength pixel pitch, with the advantage of smaller volume, lower weight, and potentially lower cost. In order to assess the limits of pixel pitch scaling, we present combined three-dimensional optical and electrical simulations of long-wavelength infrared HgCdTe FPAs, with 3 μm, 5 μm, and 10 μm pitch. Numerical simulations predict significant cavity effects, brought by the array periodicity. The optical and electrical contributions to spectral inter-pixel crosstalk are investigated as functions of pixel pitch, by illuminating the FPAs with Gaussian beams focused on the central pixel. Despite the FPAs being planar with 100% pixel duty cycle, our calculations suggest that the total crosstalk with nearest-neighbor pixels could be kept acceptably small also with pixels only $$3\,\mu \hbox {m}$$ wide and a diffraction-limited optical system.
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