Simulation of Single-Stage Tunable Amplifier Using Ferroelectric Materials

Abstract

The non-linear electric field dependence of ferroelectric thin films can be used to design frequency and phase agile components. Tunable components have traditionally been developed using mechanically tuned resonant structures, ferrite components, or semiconductor-based voltage controlled electronics, but they are limited by their frequency performance, high cost, high losses, and integration into larger systems. In contrast, the ferroelectric-based tunable microwave component can easily be integrated into conventional microstrip circuits and attributes such as small size, light weight, and low-loss make these components attractive for broadband and multi-frequency applications, many of these components are essential elements in the design of a microwave sensor and/or circuit. It has been reported that with a thin ferroelectric film placed between the top conductor layer and the dielectric material of a microstrip structure, and the proper DC bias scheme, tunable components above the Ku band can be fabricated. Components such as phase shifters, coupled line filters, and Lange couplers have been reported in the literature using this technique. In this work, simulated results from a full wave electromagnetic simulator are obtained to show the tunability of a single stage amplifier. Input and output matching networks are simulated on a ferroelectric thin film to control the frequency response of the amplifier.