Abstract

The open-source software package SolidStateDetectors.jl to calculate the fields and simulate the drifts of charge carriers in solid state detectors, especially in large volume high-purity germanium detectors, together with the corresponding pulses, is introduced. The package can perform all calculations in full 3D while it can also make use of detector symmetries. The effect of the surroundings of a detector can also be studied. The package is programmed in the user friendly and performance oriented language julia, such that 3D field calculations and drift simulations can be executed efficiently and in parallel. The package was developed for high-purity germanium detectors, but it can be adjusted by the user to other types of semiconductors. The verification of the package is shown for an n-type segmented point-contact germanium detector. Additional features of SolidStateDetectors.jl, which are under development are listed.

Highlights

  • The open-source package SolidStateDetectors.jl has been introduced as a tool to simulate semiconductor detectors

  • While special emphasis is given to germanium detectors, the package can be adjusted to simulate the response of silicon, or any other kind of semiconductor detector

  • The package was programmed in the language ulıa with special care to ensure fast execution

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Summary

Detector geometries and simulation procedure

The user defines the "world", including the geometry of the detector and, optionally, its surroundings as well as the electric boundary conditions in structured text configuration files. The simulation can be divided into two main parts: 1) the calculation of the static electric properties of a given experimental setup and 2) the drift of charge carriers inducing signals on the electrodes. Both of these are implemented in the programming language ulıa in a modular manner. For each hit or cluster, the induced charge carriers are drifted in user defined time steps, default is 1 ns, according to the previously calculated electric field and the implemented drift velocity model. The induced signals on the electrodes are computed using the weighting potentials

Electric field and weighting potentials
Charge drift and induced signals
Comparison of simulation to data
Surface events
Bulk events
Pulse-shape analysis
Developments
Summary
A Drift velocity models
B Temperature dependence of drift velocities
Full Text
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