Simulation of resonant tunneling devices: origin of the $$I$$ – $$V$$ multi-peak behavior

Abstract

Multi-peak behavior of the \(I\)–\(V\) curves of an AlAs/GaAs/AlAs double-barrier resonant tunneling diode combined with a layer of InAs quantum dots (QDs) is simulated. Our simulation results show that the coupling between the energy level in the emitter quantum well (quantum dot) layer and that in the central quantum well is the key point in understanding the origin of the \(I\)–\(V\) multi-peak behavior. The embedded designed QD layer at the emitter spacer can enhance this effect. The effects of device temperature on the \(I\)–\(V\) characteristics are also obtained. Our results provide the physical basis for understanding and utilizing the multi-peak behavior of \(I\)–\(V\) curves in designing resonant tunneling devices.