Abstract
Abstract A model for the impurity redistribution in heavily doped silicon layers suggested by Mathiot and Pfister6 is modified. Two channels of impurity diffusion are taken into account: a redistribution of impurity inside of a percolation cluster and a standard diffusion outside of that cluster. The parameters of the model are identified for the case of rapid thermal annealing of antimony in silicon. The modified model better describes the observed diffusivity dependences on temperature and doping level.
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