Abstract
The processes of redeposited and crystalline silicon sputtering under focused Ga ion-beam irradiation are simulated using the Monte Carlo method and different models of the surface binding energy of Si and Ga atoms. The sputtering yields and the profiles of the distribution of Ga atoms in the sample, calculated for different ion energies, are compared with the experimental data. It is established that the introduced model of the surface binding energy of Si and Ga atoms, taking into account the formation of Ga precipitates in the near-surface region of the sample, makes it possible to reach the best agreement with the experimental data.
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