Abstract
A refined structure, namely ring in Ge2Sb2Te5 (GST) structure (RIG) for low reset current and high thermal efficiency is proposed in this investigation. A comprehensive thermal analysis of the phase change random access memory (PCRAM) by three-dimension finite element modeling is proposed. The effect of temperature on device cell design and optimization is investigated. This study provides an insight into the thermal issues and phenomena in the PCRAM.
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