Simulation of occupation function for thermally stimulated conductivity in amorphous semiconductors

Abstract

The occupation functions for the general condition f(E, T), for the high field approximation (HTSC) fH(E, T) and for the steady state photoconductivity (SSPC) fP(E, T) in the thermally stimulated conductivity (TSC) of amorphous semiconductors have been investigated. It was found that the occupation function f(E, T) in TSC is in excellent agreement with the occupation function in SSPC fP(E, T) under the condition of σTSC(T) = σP(T). There is a large difference between fP(E, T) and fH(E, T), which can be much reduced by introducing an effective attempt to escape frequency νeff in the calculation of fH(E, T). The results show that the mobility-lifetime product (μτ) in TSC obtained from SSPC measurements under the above condition is valid. For high field approximation TSC, the simulated νeff is found to be temperature dependent.