Abstract
This paper mainly introduces the TDMOS (Trench Double Diffused MOSFET). Through the simulation of device process parameters, the influence of process parameters on device breakdown characteristics, transfer characteristics, and output characteristics are analyzed from seven aspects from the epitaxial layer thickness, resistivity, implant dose and energy of P body and NSD, trench depth, the spacing and depth of the trench in the terminal structure. Thus, the design standard with a breakdown voltage greater than 100V, a threshold voltage of about 3V, and a resistance lower than 124 mΩ·um2 is reached.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
