Abstract
Physically based simulations are used to predict an electromigration (EM) induced void nucleation and growth in dual‐inlaid copper interconnects. In this model all important atom migration driving forces are incorporated into the mass balance equation. EM‐induced degradation in an interconnect segment, which is characterized by different dominant channels for mass transport, is simulated by means of a coupled solution of the continuity equation and the electromagnetics and elasticity problems. Employment of the modified phase field method into the simulation scheme provides a capability to predict realistic locations for void nucleation as well its evolution. Vacancy generation/recombination kinetics is implemented into the model. It is shown that grain boundary (GB) and interface presence effects stress distribution by acting as the additional distributed source of vacancy generation‐annihilation as well as by providing additional channels for vacancy‐migration‐induced stress relaxation.
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