Abstract
Through modeling and simulations, we have determined the mechanisms that lead to the observed microstructural evolution induced by the scanned laser annealing (SLA) of interconnects. We found that higher laser powers and lower scan rates lead to greater transformation to bamboo microstructures, as well as to longer average bamboo grain lengths. The thermal profile along the interconnect length is shown to have a weak effect on the fraction transformed to bamboo, but a strong effect on the average bamboo grain length. Additionally, using simulations, we have determined SLA conditions that should lead to the development of single crystal structures, which are velocities of 1 μm/s or lower, laser powers 9.7 mW or higher, and steep thermal profiles.
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