Abstract
AbstractGrowth of strained semiconductors can lead to self-assembly of interesting structures such as quantum dots. Simulation of this growth requires an accurate and efficient model for the interactions of lattice mismatched materials. We present a potential for calculating the bond energies in a diamond-like crystal of silicon and germanium. With this potential we predict the strain profiles in an embedded quantum dot and discuss the mechanisms of island formation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
