Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization

Abstract

In this study the main characteristics of silicon Low Gain Avalanche Detectors (LGAD), the dependencies of the collected charge versus bias voltage and fluence, are calculated to fit experimental data. The calculations are based on two previously developed Ioffe Institute models of radiation degradation in Si detectors: 1) a model of two effective energy levels of radiation-induced defects, and 2) a mechanism of internal negative feedback responsible for the gain degradation in irradiated Si detectors originating from the avalanche multiplication at the detector junction. The combination of these models describes well the properties of irradiated p-i-n detectors in a wide range of fluences. For simulating the LGAD characteristics the models are adapted to its n+-pbi-p-p+ structure, where the built-in boron-doped layer pbi produces high electric field sufficient for carrier impact ionization. It is shown that the developed models give adequate quantitative description of the experimental results for the LGADs up to the fluence of 2×1015 n/cm2 including the detector pulse response; however, additional boron removal from the pbi layer is required to have the best correlation with the experimental data. Similar to the physical model developed for silicon strip detectors operated at high voltage, the results are interpreted in terms of the internal negative feedback mechanism. It is shown that in irradiated LGADs this feedback leads to the transfer of a significant fraction of the potential drop from the built-in layer toward the p+ contact. It initiates two negative effects, which both cause the gain degradation with irradiation: the lowering of the electric field in the n+-pbi region that reduces the multiplication probability, and the increase of the collection time and trapping-related charge losses.