Abstract
A leakage current model that includes space charge effects is developed for (Ba,Sr)TiO3 (BST) thin films. Numerical simulation using this model has been performed to investigate the leakage mechanism in an epitaxial BST thin film after a hydrogen-containing forming gas anneal. The present work suggests that before the forming gas anneal the leakage mechanism in the BST film is probably the Schottky emission whereas after the forming gas anneal the leakage characteristics can be described by the modified Schottky equation of Simmons with effective barrier heights obtained from the model simulation.
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