Abstract
We have studied through computer simulations the effects of Ga + ion implantation through masked GaAlAs/GaAs/ GaAlAs heterostructures presenting one single quantum well. The spatial distribution of the Al atoms responsible for the energy gap modifications has been calculated. Depth and lateral profiles in the quantum well of the Al recoil atoms extracted from the two dimensional distribution have elicited different types of situations encountered in collision mixing experiments. Finally, this work shows that computer simulation is of great importance for selecting the parameters to realize lateral nano-structures such as quantum wires or dots.
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